A Review Article on Fin Field Effect Transistors Technology

  • Nidhi Dhurandhar Chhattisgarh Swami Vivekanand Technical University, Newai
  • Prashant Dwivedi Chhattisgarh Swami Vivekanand Technical University, Newai
Keywords: FinFET, SCE, Independent Gate FinFET, Short Gate FinFET, Asymmetric Short Gate FinFET, Static Random Access Memory (SRAM)


There are numerous types of transistors we have studied. Beyond them, here, we have discussed an exhaustive type of Metal Oxide Field Effect Transistor (MOSFET), that is, Fin Field Effect Transistor (FinFET). Basically, we have reviewed the most demanding and promising type of Field Effect Transistor, that allows as an exclusive easy execution of transistor applications and simulation, both in digital and analog functions. So as to improve the execution and power capability of semiconductor applications, FinFET can be implemented over bulk MOSFET and are also encouraging FETs that can perform ideally over 32 nanometers technology. And due to these, as an issue of the Short Channel Effects (SCEs) can be overcome. Through multi gate FinFET designs, bulk CMOS circuits can be implemented effectively. We will see structures, different types and their classifications and some digital circuits designed by using FinFET.


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How to Cite
Dhurandhar, N., & Dwivedi, P. (2019). A Review Article on Fin Field Effect Transistors Technology. CSVTU Research Journal on Engineering and Technology, 8(1), 31-38. Retrieved from http://csvtujournal.in/index.php/rjet/article/view/43