A Review Article on Carbon Nanotube Field Effect Transistors Technology
Keywords:
CNTFET, SCE, MOSFET, CNT, ChiralityAbstract
Silicon industry is evolving and scaling down day by day. With the minimized size of the transistor, the craving for high performance devices also takes place. For MOSFET, size is limited and below some dimensions the device will undergo leakage current, parasitic capacitances, power dissipation issues. Hence, researchers has implemented a novel device named, CNTFET (Carbon NanoTube Field Effect Transistor). CNTFET provides high carrier mobility, reduction in delay and power consumption, better noise margin, suitable contact resistance and fast switching speed. In this review paper, different structures, CNTFET classifications, chiral vector and chirality has been discussed.
References
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11. Sankar, P. G., & Udhayakumar, K. (2014). MOSFET-like CNFET based logic gate library for low-power application: a comparative study. Journal of Semiconductors, 35(7), 075001.
12. Rueckes, T., Kim, K., Joselevich, E., Tseng, G. Y., Cheung, C. L., & Lieber, C. M. (2000). Carbon nanotube-based nonvolatile random access memory for molecular computing. science, 289(5476), 94-97.
13. Deng, J., & Wong, H. S. P. (2007). A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part I: Model of the intrinsic channel region. IEEE Transactions on Electron Devices, 54(12), 3186-3194.
14. O'Connor, I., Liu, J., Gaffiot, F., Prégaldiny, F., Lallement, C., Maneux, C., ... & Dang, T. T. (2007). CNTFET modeling and reconfigurable logic-circuit design. IEEE Transactions on Circuits and Systems I: Regular Papers, 54(11), 2365-2379.
15. Wind, S. J., Appenzeller, J., & Avouris, P. (2003). Lateral scaling in carbon-nanotube field-effect transistors. Physical Review Letters, 91(5), 058301.
16. Javey, A., Tu, R., Farmer, D. B., Guo, J., Gordon, R. G., & Dai, H. (2005). High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano letters, 5(2), 345-348.
17. Lin, Y. M., Appenzeller, J., Knoch, J., & Avouris, P. (2005). High-performance carbon nanotube field-effect transistor with tunable polarities. IEEE Transactions on Nanotechnology, 4(5), 481-489.
18. Adessi, C., Avriller, R., Blase, X., Bournel, A., d'Honincthun, H. C., Dollfus, P., ... & Nguyen, H. N. (2009). Multiscale simulation of carbon nanotube devices. Comptes Rendus Physique, 10(4), 305-319.
19. Lin, S., Kim, Y. B., & Lombardi, F. (2009). Design of a CNTFET-based SRAM cell by dual-chirality selection. IEEE Transactions on Nanotechnology, 9(1), 30-37.
20. Wikipedia, Chirality.
21. Polash, B., & Huq, H. F. (2008, August). Analytical model of carbon nanotube field effect transistors for NEMS applications. In 2008 51st Midwest Symposium on Circuits and Systems(pp. 61-64). IEEE.
22. Prakash, P., Sundaram, K. M., & Bennet, M. A. (2018). A review on carbon nanotube field effect transistors (CNTFETs) for ultra-low power applications. Renewable and Sustainable Energy Reviews, 89, 194-203.
2. Hu, C. (1996, December). Gate oxide scaling limits and projection. In International Electron Devices Meeting (pp. 319-322).
3. Marani, R., & Perri, A. G. (2012). Modelling and implementation of subthreshold currents in schottky barrier CNTFETs for digital applications. International Journal of Research and Reviews in Applied Sciences, 11(3), 377-385.
4. Wikipedia, Carbon NanoTube FET (CNTFET).
5. Alokik Kanwal, 2003. A Review of Carbon Nanotube Field Effect Transistors. Version 2.0.
6. Marani, R., & Perri, A. G. (2015). The next generation of FETs: CNTFETs. arXiv preprint arXiv:1511.01356.
7. Alvi, P. A., Lal, K. M., Siddiqui, M. J., & Naqvi, A. H. (2005). Carbon nanotubes field effect transistors: A review.
8. Es-Sakhi, A. D., & Chowdhury, M. H. (2014, September). Multichannel Tunneling Carbon Nanotube Field Effect Transistor (MT-CNTFET). In 2014 27th IEEE International System-on-Chip Conference (SOCC) (pp. 156-159). IEEE.
9. Wikipedia, Carbon NanoTube (CNT).
10. Sahoo, R., & Mishra, R. R. (2009). Simulations of carbon nanotube field effect transistors. International Journal of Electronic Engineering Research, 1(2), 117-125.
11. Sankar, P. G., & Udhayakumar, K. (2014). MOSFET-like CNFET based logic gate library for low-power application: a comparative study. Journal of Semiconductors, 35(7), 075001.
12. Rueckes, T., Kim, K., Joselevich, E., Tseng, G. Y., Cheung, C. L., & Lieber, C. M. (2000). Carbon nanotube-based nonvolatile random access memory for molecular computing. science, 289(5476), 94-97.
13. Deng, J., & Wong, H. S. P. (2007). A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part I: Model of the intrinsic channel region. IEEE Transactions on Electron Devices, 54(12), 3186-3194.
14. O'Connor, I., Liu, J., Gaffiot, F., Prégaldiny, F., Lallement, C., Maneux, C., ... & Dang, T. T. (2007). CNTFET modeling and reconfigurable logic-circuit design. IEEE Transactions on Circuits and Systems I: Regular Papers, 54(11), 2365-2379.
15. Wind, S. J., Appenzeller, J., & Avouris, P. (2003). Lateral scaling in carbon-nanotube field-effect transistors. Physical Review Letters, 91(5), 058301.
16. Javey, A., Tu, R., Farmer, D. B., Guo, J., Gordon, R. G., & Dai, H. (2005). High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano letters, 5(2), 345-348.
17. Lin, Y. M., Appenzeller, J., Knoch, J., & Avouris, P. (2005). High-performance carbon nanotube field-effect transistor with tunable polarities. IEEE Transactions on Nanotechnology, 4(5), 481-489.
18. Adessi, C., Avriller, R., Blase, X., Bournel, A., d'Honincthun, H. C., Dollfus, P., ... & Nguyen, H. N. (2009). Multiscale simulation of carbon nanotube devices. Comptes Rendus Physique, 10(4), 305-319.
19. Lin, S., Kim, Y. B., & Lombardi, F. (2009). Design of a CNTFET-based SRAM cell by dual-chirality selection. IEEE Transactions on Nanotechnology, 9(1), 30-37.
20. Wikipedia, Chirality.
21. Polash, B., & Huq, H. F. (2008, August). Analytical model of carbon nanotube field effect transistors for NEMS applications. In 2008 51st Midwest Symposium on Circuits and Systems(pp. 61-64). IEEE.
22. Prakash, P., Sundaram, K. M., & Bennet, M. A. (2018). A review on carbon nanotube field effect transistors (CNTFETs) for ultra-low power applications. Renewable and Sustainable Energy Reviews, 89, 194-203.
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Published
2019-07-29
How to Cite
Dhurandhar, N., & Dwivedi, P. (2019). A Review Article on Carbon Nanotube Field Effect Transistors Technology. CSVTU Research Journal, 8(1), 56–62. Retrieved from https://csvtujournal.in/index.php/rjet/article/view/59
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